Two-State Current Phenomenon in MOS Device with Al2O3/Al/SiO2 Dielectric Stack Structure
碩士 === 國立臺灣大學 === 電子工程學研究所 === 103 === In this thesis, a MOS capacitor with Al2O3/Al/SiO2 dielectric stack structure was fabricated and it is observed that there is a two-state characteristic in this device. In chapter 2, it is shown that the two-state characteristic results from the two-state trans...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/65283410732371309772 |