Effect of Constant Voltage Stress Treatments on theElectrical Characterization and Device Application ofMOS Capacitor with Ultra-Thin Oxide
博士 === 國立臺灣大學 === 電子工程學研究所 === 103 === Non-ideal factors always exist in electrical devices and the factors become significant in downscaling devices. Lateral non-uniformity, along the channel or in a direction paralleling to dielectric layers, is one of the non-ideal factors in the MOS devices. Amo...
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| Format: | Others |
| Language: | en_US |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/79919014246335413382 |