Fabrication and Analysis of Enhancement Mode AlGaN/GaN MOSHEMTs Using Fluoride-based Plasma Treatment
碩士 === 國立臺灣大學 === 光電工程學研究所 === 103 === In this thesis, we investigated the effect of gate recess process and oxide layer deposition on DC characteristics of AlGaN/GaN HEMT first. Threshold voltage of AlGaN/GaN HEMTs can be shifted by gate recess process and oxide layer deposition. Gate recess proces...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/46959578248092396087 |