Characteristics of III- Nitride Metal Oxide Semiconductor Transistors on Different Substrates
碩士 === 國立臺灣大學 === 光電工程學研究所 === 103 === This work is focused on the use of the photoelectrochemical oxidation (PEC oxidation) method on both AlGaN/GaN on sapphire substrate and gate recessed AlGaN/GaN on silicon substrate to realize metal-oxide-semiconductor high electron mobility transistors (MOS-HE...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/98130523890666577356 |