Floating-gate Material Systems for Transistor-type Memory Devices

博士 === 國立臺灣大學 === 化學工程學研究所 === 103 === Abstract Organic-based memory devices have received extensive scientific interest due to their advantages of flexibility, scalability, and material variety. A typical type of charge-trapping OFET memory is organic floating-gate memory. In this device, charges...

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Bibliographic Details
Main Authors: Hsuan-Chun Chang, 張亘鈞
Other Authors: Wen-Chang Chen
Format: Others
Language:en_US
Published: 2015
Online Access:http://ndltd.ncl.edu.tw/handle/23690571512168087481