Fabrication and Analysis of Silicon-Based Vertical-Type Tunneling Field-Effect Transistor
碩士 === 國立臺灣師範大學 === 光電科技研究所 === 103 === Recently, a transistor with tunneling mechanism called Tunnel FET was proposed as the candidate of MOSFET. Compared to MOSFET, TFET has several advantages: (1)TFET is suitable for low power device due to the higher barrier of the reversed p-i-n junction in TF...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/78454520049893103686 |