Study and Fabrication of High Power GaN p-i-n Diodes Grown on Sapphire
博士 === 國立清華大學 === 電子工程研究所 === 103 === In this study, the Gallium Nitride (GaN) p-i-n diodes grown on pattern sapphire substrates by MOCVD have been fabricated to study the electrical characteristics of the GaN p-i-n diodes. To be a great high power device, the reverse breakdown characteristics of Ga...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/69880560261085606591 |