Study of Tunnel Field-Effect Transistors With Different Poly-Si Channel Thickness
碩士 === 國立中山大學 === 電機工程學系研究所 === 103 === Tunneling field-effect transistors(TFET),as promising candidates for less power hungry devices, have large ON/OFF ratio, steep subthreshold slope and low leakage current. For convention TFET ,on-state current is general much lower than that of inversion-mode d...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/06468285680603144680 |