Study of Tunnel Field-Effect Transistors With Different Poly-Si Crystallization Method

• Main Authors: Sheng-Wei Yuan, 袁笙維
• Other Authors: Cheng-Yu Ma
• Format: Others
• Language: zh-TW
• Published: 2015
• Online Access: http://ndltd.ncl.edu.tw/handle/rbp2vg

碩士 === 國立中山大學 === 電機工程學系研究所 === 103 === There are three research directions in this thesis to discuss, respectively, including the improvement of poly-silicon crystallization to the device performance, impact of scaling down for conductivity of tunnel transistor, reliability of different channel crystallizations of the device. Using nickel to be a material of Metal Induced Lateral Crystallization (MILC) which has similar off-state current, higher on-state current and better subthreshold slope (or subthreshold swing) than Solid Phase Crystallization (SPC). These advantages of electrical characteristic are attributed to MILC has bigger grain size that leads electrons through the channel with less influenced by strain bond and dangling bond. The transmission principle of tunnel transistor is totally different from conventional transistor. The on-state current of conventional transistor increases with the channel length decreases. However, the transmission principle of tunnel transistor is dominated by band bending, so that it has less influenced in Short Channel Effect (SCE). If the device has smaller changes after influenced by temperature and voltage, which means it has higher reliability, it will be a suitable device for long-term use.