Interfacial electronic structure of gold on p-GaAs(001)-2×4 : A Schottky barrier height study

碩士 === 國立嘉義大學 === 電子物理學系光電暨固態電子研究所 === 103 === Using synchrotron-radiation photoemission, I have studied evolution of the interfacial electronic structure of Au atoms deposited on a clean p-GaAs(100)-2×4 surface. Photoemission spectra, show that in the initial stage gold atoms adsorb on the side of...

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Bibliographic Details
Main Author: 魏國珍
Other Authors: 鄭秋平
Language:zh-TW
Online Access:http://ndltd.ncl.edu.tw/handle/49068529356585189983