The study on Characteristics of Sol-Gel Solution-Deposited Oxide Thin-Film Transistor with Stacking Layer Structure

• Main Authors: Zheng-Yao Huang, 黃政堯
• Other Authors: Yu-Wu Wang
• Format: Others
• Language: zh-TW
• Online Access: http://ndltd.ncl.edu.tw/handle/18151017556246703561

碩士 === 國立彰化師範大學 === 物理學系 === 103 === We used the sol - gel method to make bottom-gate, bottom contact zinc–tin oxide (ZTO) thin-film transistors (TFTs). Then we have studied thermal stability, channel length physical characteristics and electrical characteristics on this TFTs. We found that the highest saturation mobility of the TFTs with 0.3M is 2.463 cm2v-1s-1. The on-off ratio of 0.3M ZTO TFT was 6 orders. Then we studied physical characteristics and electrical characteristics on the stacking layer structure TFTs like SnO/ZTO, ZTO/GZO, SnO/ZTO/GZO TFTs. We found that ZTO/GZO TFTs has less subthreshold swing (S.S) of 1.239 (V/decade). And SnO/ZTO/GZO TFTs has the highest mobility is 8.359. It’s much better then ZTO TFTs. It is due to the material SnO has much higher mobility. So we add the SnO layer into channel layer. At last, we investigated SnO layer and GZO layer stacking effect on thermal stability. Owing to the high thermal stability of GZO, we used this characteristic to cover a GZO layer on ZTO layer. Then ZTO/GZO has good thermal stability in this studied .