The study on Characteristics of Sol-Gel Solution-Deposited Oxide Thin-Film Transistor with Stacking Layer Structure

碩士 === 國立彰化師範大學 === 物理學系 === 103 === We used the sol - gel method to make bottom-gate, bottom contact zinc–tin oxide (ZTO) thin-film transistors (TFTs). Then we have studied thermal stability, channel length physical characteristics and electrical characteristics on this TFTs. We found that the high...

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Bibliographic Details
Main Authors: Zheng-Yao Huang, 黃政堯
Other Authors: Yu-Wu Wang
Format: Others
Language:zh-TW
Online Access:http://ndltd.ncl.edu.tw/handle/18151017556246703561