Development of Silicon-based Epitaxial Germanium Films and Photodetectors.
碩士 === 國立中央大學 === 照明與顯示科技研究所 === 103 === In this research, topic is Development of silicon-based epitaxial germanium films and photodetectors at a low temperature. Germanium whose bandgap is 0.66eV can absorb near-infrared light of wavelength. Germanium of Mobility is fast than silicon so germanium...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/445cy8 |