Development of in-situ measurement system of wafer surface temperature in MOCVD process
碩士 === 國立中央大學 === 光機電工程研究所 === 103 === The purpose of this paper is to measure the wafer surface temperature during the Metal Organic Chemical Vapor Deposition (MOCVD) process. Measurement are based on Plank’s blackbody radiation theorem and Kirchhoff’s law. A function generator (FG) is used to mo...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/946ujf |