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碩士 === 國立中央大學 === 光機電工程研究所 === 103 === In this study, the intrinsic/phosphorus doping hydrogenated amorphous silicon (a-Si:H) double structure was optimized by the process conditions in which film growth of doped silicon as a back surface field (BSF) layer in a symmetric cell structure was prepared...
Main Authors: | , |
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Other Authors: | |
Format: | Others |
Language: | zh-TW |
Published: |
2015
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Online Access: | http://ndltd.ncl.edu.tw/handle/k5s98z |