| Summary: | 碩士 === 國立中央大學 === 機械工程學系 === 103 === In this study, OES (Optical emission spectrometer), and QMS (Quadrupole mass spectrometry) were utilized as plasma diagnostics tools and a-Si:H (Hydrogenated amorphous silicon ) thin film was deposited by electron cyclotron resonance chemical vapor deposition (ECR-CVD). QMS and OES were used to identify active species in the plasma. The film quality such as microstructure fraction (R*), hydrogen content (CH), deposition rate, and lifetime were investigated by FT-IR, Detak and E-gun. The relationship between the film quality and plasma characteristics with varying process parameters (microwave power density, working pressure, magnetic field resonance position, and dilution ratio) was discussed.
The research collects all the parameter to predict the good quality of film. It uses the photosensitivity, microstructure fraction (R*) that can obtain the photosensitivity 〖2x10〗^3 under the conditions of magnitude 40/12/22 A, power density 1.5 W/cm2 and working pressure 10 mTorr.
Consequently, the research integrates the OES and QMS for using SiH2/SiH3 as the index of predicting quality of film and takes Si*/SiH* as the index of electron temperature. By depositing amorphous silicon thin film, it analyzes the mechanisms of ECR plasma and the research results can be used for creating the good environment for depositing film that can reduce the try and error of process time.
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