Comparison Between Polysilicon and Metal Gate in 2D MOSFET Simulation
碩士 === 國立中央大學 === 電機工程學系 === 103 === In this thesis, we use Poisson’s equation and continuity equations to design an equivalent circuit model for 2-D device simulation. The device simulation will be transformed into the circuit simulation. The simulation will become a mixed-level device and circuit...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/79754467060309799655 |