Effect of Plasma Surface Treatment on Polycrystalline-Silicon Tunnel Thin-Film Transistor
碩士 === 國立交通大學 === 電子物理系所 === 103 === Tunnel field-effect transistors (TFETs) based on band-to-band tunneling (BTBT) as the carrier injection mechanism, has been known that exhibit higher on/off current ratio, steep subthreshold swing (S.S.), and ultralow off leakage current than conventional MOSFETs....
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| Format: | Others |
| Language: | en_US |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/52246726314079854021 |