Exploring Surface Structure and Electronic Properties of Reduced Graphene Oxide by Scanning Probe Microscopy

• Main Authors: Jheng, Yi-Han, 鄭伊涵
• Other Authors: Jian, Wen-Bin
• Format: Others
• Language: zh-TW
• Published: 2015
• Online Access: http://ndltd.ncl.edu.tw/handle/93162925446038632147

碩士 === 國立交通大學 === 電子物理系所 === 103 === In this experiment, we explore the surface structure and electronic properties of reduced grapheme oxide (rGO) by scanning tunneling microscopy (STM) and atomic force microscopy (AFM) in order to study the ordered patterns on rGO surface. The AFM images of rGO reveal that the thickness of single layer rGO sheet is 1 nm. Wrinkles induced by the oxidation and deposition process are clearly observed in AFM images. The two kinds of morphology ordered stripes and disordered structure can be observed from the STM images of rGO. Through scanning tunneling spectroscopy (STS), the ordered region has zero band gap, and disordered region has higher band gap about 1~2 eV. Disordered region can be attributed to high oxide coverage. Ordered region is accounted for lower oxide coverage which oxide atoms form the stripe structure along the armchair direction, so we can observe the ordered stripe in STM image.