Analysis of Carrier Dynamics Storage in GaAsN/GaAs Quantum Well under Illumination using Transient Theory and Time-resolved Measurement
碩士 === 國立交通大學 === 電子物理系所 === 103 === In this study, we analyze the transient current and transient capacitance measurement of the N=2.7% 80 Å GaAsN/GaAs quantum well (QW) samples grown by MBE, and discuss the dynamic processes of carrier storage in QW for the change of light situation. At the moment...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/00482244326265817297 |