Schottky Barrier Heights of the YbSi/Si and YbGe/Ge Contacts: A Density-functional Study
碩士 === 國立交通大學 === 電子工程學系 電子研究所 === 103 === The carrier mobility of Ge is higher than that of Si. Such a semiconductor will very likely be the next-generation channel material to replace Si as the traditional Si-based MOSFET is approaching its scaling limit. This new development promises to...
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/45247096671992199868 |