Mid-infrared laser using type-II InGaAs/GaAsSb quantum wells on InP substrate
博士 === 國立交通大學 === 電子工程學系 電子研究所 === 103 === In this thesis, the mid-infrared lasers were grown on InP substrates by the molecular beam epitaxy system. Highly strained type-I InAs QW was often used to be the active region to extend lasing wavelength. However, to reduce the stress, the type-II InGaAs/G...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/54378738003237010823 |