A Study on the Characteristics of 4H-SiC MOSFETs and Improvement of Deep Level Transient Spectroscopy System
碩士 === 國立交通大學 === 電子工程學系 電子研究所 === 103 === Silicon carbide (SiC) is a semiconductor material which is suitable for high power and high temperature application due to its wide bandgap, high breakdown electric field, and good thermal conductivity. However, low channel carrier mobility is an important...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2014
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/81255930920244596968 |