Studies of Sb-contained Semiconductor Growth and High Electron Mobility Transistor
博士 === 國立交通大學 === 電子工程學系 電子研究所 === 103 === The purpose of this dissertation is to understand comprehensively the growth of the Sb-contained semiconductor material systems by MBE and the electronic characteristics of the type-I InAs/AlAsSb high electron mobility transistor on GaAs substrates. To supp...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/33091634512267619924 |