Nitride Charge Transport and Its Role in Erase Transient Simulation in SONOS
碩士 === 國立交通大學 === 電子工程學系 電子研究所 === 103 === There are many studies about program/erase in SONOS flash memory, but there are two controversial issues of erase operation. One is the dominant mechanism in erase operation; another one is physics mechanism about the anomalous turn around behavior in erase...
Main Authors: | He, Si-Xian, 何思嫻 |
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Other Authors: | Wang, Ta-Hui |
Format: | Others |
Language: | en_US |
Published: |
2014
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Online Access: | http://ndltd.ncl.edu.tw/handle/66402949045463634614 |
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