Nitride Charge Transport and Its Role in Erase Transient Simulation in SONOS

碩士 === 國立交通大學 === 電子工程學系 電子研究所 === 103 === There are many studies about program/erase in SONOS flash memory, but there are two controversial issues of erase operation. One is the dominant mechanism in erase operation; another one is physics mechanism about the anomalous turn around behavior in erase...

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Bibliographic Details
Main Authors: He, Si-Xian, 何思嫻
Other Authors: Wang, Ta-Hui
Format: Others
Language:en_US
Published: 2014
Online Access:http://ndltd.ncl.edu.tw/handle/66402949045463634614