Nitride Charge Transport and Its Role in Erase Transient Simulation in SONOS

• Main Authors: He, Si-Xian, 何思嫻
• Other Authors: Wang, Ta-Hui
• Format: Others
• Language: en_US
• Published: 2014
• Online Access: http://ndltd.ncl.edu.tw/handle/66402949045463634614

碩士 === 國立交通大學 === 電子工程學系 電子研究所 === 103 === There are many studies about program/erase in SONOS flash memory, but there are two controversial issues of erase operation. One is the dominant mechanism in erase operation; another one is physics mechanism about the anomalous turn around behavior in erase transient. In this thesis, we establish a more complete model and it can be used to investigate the charge transport and charge capture/emission in the nitride layer. We can use this model to simulate the electron and hole transport properties in erase operation and we show that which type of carrier will dominate is depend on bottom oxide thickness. We also reproduced the turn-around behavior in erase transient and we explain the reason for the turn-around behavior. The charge built up near the top oxide interface/nitride. Therefore, it will affect the top oxide electric field and caused the abnormal behavior. Finally, we analyze this phenomenon in different conditions, such as different hopping rate and bottom oxide thickness.