Modeling the Statistical Distribution of Random Telegraph Signals Magnitudes and Induced Threshold Voltage Shifts in Subthreshold Nanoscale MOSFETs

• Main Authors: Wang, Huan-Hsiang, 王煥翔
• Other Authors: Chen, Ming-Jer
• Format: Others
• Language: en_US
• Published: 2014
• Online Access: http://ndltd.ncl.edu.tw/handle/40247914553609396967

碩士 === 國立交通大學 === 電子工程學系 電子研究所 === 103 === The trapping and detrapping of an electron at the SiO2/Si interface of metal-oxide-semiconductor field effect transistor (MOSFET), which is known as random telegraph signals (RTS), has been an important issue for the variability of the nanoscale device. Recently, 3D-technology aided design (TCAD) simulations have been widely used for RTS topics. The trap positions in the channel will have its corresponding ΔId/Id magnitude in the subthreshold region at a low drain voltage. There are two distinct ΔId/Id distributions: a headed one for the percolation-free channel and a tail one for the percolative channel. The tail distribution can be described by using a literature formula 〖∆I〗_d/I_d =(I_loc/I_d )^2, where Iloc is the local current around the trap. Our proposed model can reproduce headed distribution through few 3D-TCAD simulations on 35x35 nm2 channel to obtain the Id/Id for each trap position. The model is in closed form, and the key criteria are drawn from the model for the use of I_loc/I_d formula. Furthermore, the threshold voltage shift distributions can be transformed from the tail distributions, from subthreshold to inversion. The channel width effect can be included through applying the width effect into our headed distributions. Importantly, the use of the analytic model can overcome the disadvantage of statistical experiments or simulations.