Modeling the Statistical Distribution of Random Telegraph Signals Magnitudes and Induced Threshold Voltage Shifts in Subthreshold Nanoscale MOSFETs
碩士 === 國立交通大學 === 電子工程學系 電子研究所 === 103 === The trapping and detrapping of an electron at the SiO2/Si interface of metal-oxide-semiconductor field effect transistor (MOSFET), which is known as random telegraph signals (RTS), has been an important issue for the variability of the nanoscale device. Rec...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/40247914553609396967 |