Investigation on Amorphous Nitrogenated Indium Gallium Zinc Oxide Thin Film Transistors Application
碩士 === 國立交通大學 === 電子工程學系 電子研究所 === 103 === Amorphous oxide semiconductors (AOSs) are attracted much attention due to high mobility, low temperature deposition, flexible, transmission, and uniformity. It has been investigated of AOSs, such as ITO, IZO, TiO2, ZnO, In2O3, Ga2O3, IGO, a-IGZO, etc. Espec...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/666u6p |