The Design and Fabrication of Low Power Bi-layer RRAM and the Study of Its Conduction Mechanism
碩士 === 國立交通大學 === 電子工程學系 電子研究所 === 103 === Charge-trapping memory devices (e.g., FLASH, SONOS etc.) have several inherent disadvantages that are difficult to overcome, such as random dopant fluctuation, random telegraph noise, and mismatch between program and erase. The thickness of tunnel oxide als...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/x9g6hh |