Investigation of light emitting diodes prepared on n-doped GaN thick layers by HVPE
碩士 === 國立交通大學 === 照明與能源光電研究所 === 103 === In this thesis, we studied the growth of different concentrations of nGaN film on a sputtered AlN/high-aspect ratio patterned sapphire substrate (HARPSS) via hydride vapor phase epitaxy (HVPE) to improve the p-side-up mesa-structure of GaN LEDs obtained f...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/q524vy |