A Study of Electromigration Behaviors of Chalcogenide Thin-films and Their Thermal Properties to the Operational Properties of Phase-change Memory
博士 === 國立交通大學 === 材料科學與工程學系所 === 103 === Ge2Sb2Te5 (GST) is the most common chalcogenide materials serving as the programming layer of phase-change memory (PCM). Since the signal recording of PCM is induced by the electrical heating, the electromigration (EM) behaviors and thermal properties of GS...
Main Authors: | , |
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Other Authors: | |
Format: | Others |
Language: | en_US |
Published: |
2015
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Online Access: | http://ndltd.ncl.edu.tw/handle/33614821268687840016 |