A Study of Electromigration Behaviors of Chalcogenide Thin-films and Their Thermal Properties to the Operational Properties of Phase-change Memory

博士 === 國立交通大學 === 材料科學與工程學系所 === 103 ===   Ge2Sb2Te5 (GST) is the most common chalcogenide materials serving as the programming layer of phase-change memory (PCM). Since the signal recording of PCM is induced by the electrical heating, the electromigration (EM) behaviors and thermal properties of GS...

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Bibliographic Details
Main Authors: Huang, Yin-Hsien, 黃胤諴
Other Authors: Hsieh, Tsung-Eong
Format: Others
Language:en_US
Published: 2015
Online Access:http://ndltd.ncl.edu.tw/handle/33614821268687840016