Growth and Characterization of III-Nitride on Si Substrates for High-Power Electronic Applications
博士 === 國立交通大學 === 材料科學與工程學系所 === 103 === Owing to the distinctive material properties of GaN, GaN-based device exhibits superior characteristics on high breakdown voltage and high current. The integration of GaN and a large diameter Si substrate makes the GaN-on-Si device be a promising candidate fo...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/58075611578759652994 |