A Study of Memory Transistor Comprised of Thin-film Transistor and Nonvolatile Floating Gate Memory

A Study of Memory Transistor Comprised of Thin-film Transistor and Nonvolatile Floating Gate Memory

碩士 === 國立交通大學 === 材料科學與工程學系所 === 103 === Preparation and characterizations of the memory transistor (MT) with 1-transistor-and-1-capacitor device structure by combining the InGaZnO (IGZO) thin-film transistor and the nonvolatile floating gate memory (NFGM) containing AgInSbTe (AIST)-SiO2 nanocomposi...

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Bibliographic Details
Main Authors:	Peng, Tzu-Hsuan, 彭子瑄
Other Authors:	Hsieh,Tsung-Eong
Format:	Others
Language:	zh-TW
Published:	2014
Online Access:	http://ndltd.ncl.edu.tw/handle/62890518263582294112

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