A Study of Memory Transistor Comprised of Thin-film Transistor and Nonvolatile Floating Gate Memory
碩士 === 國立交通大學 === 材料科學與工程學系所 === 103 === Preparation and characterizations of the memory transistor (MT) with 1-transistor-and-1-capacitor device structure by combining the InGaZnO (IGZO) thin-film transistor and the nonvolatile floating gate memory (NFGM) containing AgInSbTe (AIST)-SiO2 nanocomposi...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/62890518263582294112 |