The study of the effect of silicon nitride layer on inhibiting meltback etching phenomenon for growth of GaN on Si(111)
碩士 === 國立交通大學 === 材料科學與工程學系所 === 103 === GaN on Si(111) is an important structure in high-power devices for which heteroepitaxy of GaN on Si plays a critical role in the device fabrication. However, direct growth of GaN on Si may accompany with meltback etching reaction on Si which deteriorate the f...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/68594158416568938000 |