Visible and Far Infrared Laser Annealing-enabled Low Thermal Budget SiGe Nano-scaled Transistor
碩士 === 國立交通大學 === 光電工程研究所 === 103 === In this thesis, the amorphous SiGe thin film is deposited by ICPCVD at low temperature of 450oC, the SiGe thin film is then crystallized by visible laser crystallization (λ=532 nm). The grain size of as-crystallized poly-SiGe thin films range from 500 nm to 600...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/67006893370454453698 |