Patterned sol-gel IGZO TFT by surface energy modification.
碩士 === 國立交通大學 === 光電工程研究所 === 103 === Solution-processed indium-gallium-zinc-oxide TFTs has been studied for recent years. The most attractive is the low cost fabrication processes, high charge carrier mobility and high optical transparency. Amorphous In-Ga-Zn-O thin film transistors (a-IGZO TFTs) h...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/hq5e2b |