Interface Improvements of a-InGaZnO TFTs by Introducing a Double Active Layer Structure

• Main Authors: Chan, Feng-Jui, 詹豐瑞
• Other Authors: Shieh, Han-Ping
• Format: Others
• Language: en_US
• Published: 2014
• Online Access: http://ndltd.ncl.edu.tw/handle/15468614840193845534

碩士 === 國立交通大學 === 光電工程研究所 === 103 === a-IGZO has been demonstrated successfully as the active layer in TFTs, but the electrical reliability of a-IGZO TFTs still have some issues needs to be concerned. The method about reducing interface defect of a-IGZO TFTs have rarely been reported. Therefore, a double-active-layered structure with a-IGO/a-IGZO was adopted for interface alignment of a-IGZO TFTs in this study. According to analytical results, a smoother surface roughness of 0.25nm in a-IGZO thin film was obtained by the a-IGO/a-IGZO stacked structure. The double a-IGO/a-IGZO TFTs exhibited sub-threshold swing (S.S) of 0.4 V/decade and hysteresis of 0.40V, whereas the single-layered a-IGZO TFTs showed S.S of 0.93 V/decade and hysteresis of 1.35V. The improved interface of a-IGO/a-IGZO TFTs also presented less charge trapping under stressing. Therefore, a-IGO as alignment layer reduce the interface trapping effectively.