Investigation on Resistive Switching Characteristics of Amorphous Oxide Based Resistive Random Access Memory Combined with Thin-film Transistor
碩士 === 國立交通大學 === 光電工程研究所 === 103 === Many types of consumer electronics products require high-capacity memory with the development of the technology, in which demanding for non-volatile memory is the largest. Flash memory face the issue of scale limit, so the research of next generation non-vol...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/97294k |