The Influence of Various Flow Rates on Flow Features in MOCVD Reactor

• Main Authors: JimmyZhong, 鍾哲允
• Other Authors: Matthew Smith
• Format: Others
• Language: en_US
• Published: 2015
• Online Access: http://ndltd.ncl.edu.tw/handle/72351254068232231845

碩士 === 國立成功大學 === 機械工程學系 === 103 === Presented is an investigation into the influence of various flow rates on flow features within a MOCVD (Metal-Organic Chemical Vapor Deposition) reactor. Two most commonly used reactors designs are introduced, with one of these generally regarded as an aggregate of a horizontal reactor. Based on this, we employ a simple test reactor geometry commonly used for MOCVD research and develop simulation models for the modelling of the flow and chemical reaction process within. A variety of solvers are investigated for the given governing equations, including two different non-linear solvers, with the methods and efficiency of these solvers discussed in brief detail. The outcome of the simulations demonstrate that the flowrate of type III and type V gas flows through the reactor plays a key role in the location of the production of the target molecule for deposition (based on TMGA-type MOCVD) and where flow speeds are too high, the rate of reaction is low enough that the uniformity on the wafer is impacted.