| Summary: | 碩士 === 國立成功大學 === 機械工程學系 === 103 === Presented is an investigation into the influence of various flow rates on flow features within a MOCVD (Metal-Organic Chemical Vapor Deposition) reactor. Two most commonly used reactors designs are introduced, with one of these generally regarded as an aggregate of a horizontal reactor. Based on this, we employ a simple test reactor geometry commonly used for MOCVD research and develop simulation models for the modelling of the flow and chemical reaction process within. A variety of solvers are investigated for the given governing equations, including two different non-linear solvers, with the methods and efficiency of these solvers discussed in brief detail. The outcome of the simulations demonstrate that the flowrate of type III and type V gas flows through the reactor plays a key role in the location of the production of the target molecule for deposition (based on TMGA-type MOCVD) and where flow speeds are too high, the rate of reaction is low enough that the uniformity on the wafer is impacted.
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