Simulation of Breakdown Voltage Characteristics of 4H-SiC Schottky Barrier Diode with Edge Termination Structure
碩士 === 國立成功大學 === 電機工程學系 === 103 === Silicon-Carbide (SiC) has many superior material properties in power device applications against mature manufacturing Silicon wafer. For example, SiC has wide bandgap, high breakdown field, high thermal conductivity and so on. With the promotion of the green tech...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2015
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/87828106135915168872 |