Investigation of AlGaN/GaN HEMT by Post gate annealing and various gate-drain spacing
碩士 === 國立成功大學 === 微電子工程研究所 === 103 === This research proposed the investigation of different gate-drain spacing and different passivation layers on the AlGaN/GaN high electron mobility transistors (HEMTs). We adopt SiO¬2 and Al2O3 to be the passivation layers. Comparison with different passivation l...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2015
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/4hy6a9 |