Fabrication and Investigation of Nitride-Based Devices Grown on Si and Patterned Substrate by MOCVD
博士 === 國立成功大學 === 微電子工程研究所 === 103 === The main purpose of this study is to investigate the factors that interfere with the quality of GaN grown on Si (111) substrate and patterned substrate. Numerous methods were used to improve the quality of the epitaxial layer and the device characteristics. Hig...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/85955847908722805662 |