Growth and Characterization of InxAl1-xN Epilayers Using MOCVD
碩士 === 國立中興大學 === 材料科學與工程學系所 === 103 === In this study, the InxAl1-xN epilayers have been grown on GaN templates by metalorganic chemical vapor deposition (MOCVD). Several growth conditions consisting of the deposition pressure, the amount of superlattice pairs, and the TMIn flow rate were modified...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/05431203481088742359 |