Effects of different ethane/nitrogen ratios on the properties of thermal chemical vapor deposition carbon thin films

• Main Authors: Hsin-Hung Lai, 賴信宏
• Other Authors: 薛顯宗
• Format: Others
• Language: zh-TW
• Published: 2015
• Online Access: http://ndltd.ncl.edu.tw/handle/97462846080530441011

碩士 === 國立中興大學 === 材料科學與工程學系所 === 103 === This study investigates the effects of C2H6/(C2H6+N2) ratios on the properties of carbon films prepared by thermal chemical vapor deposition. The thickness, microstructure, electrical property of carbon films and residual gases in the gas phase were investigated by field emission scanning electron microscopy, X-ray diffraction spectrometer, Raman scattering spectrometer, X-ray photoelectron spectrometer, four-points probe, and residual gas analyzer. Experimental results indicate that the carbon film is mainly arisen from the deposition of acetylene (C2H2), ethylene (C2H4), and ethenyl(C2H3) on the silica glass plate substrate. The deposition rate of carbon films increases with increasing the C2H6/(C2H6+N2) ratio, which is a first-order reaction. When the C2H6/(C2H6+N2) ratio increases, the electrical resistivity of carbon films increases, but but the crystallinity, degree of ordering, size of mean crystallite, and content of sp2 C=C bonding of carbon films decrease. Finally, these results are compared with those using CH4/N2, C2H4/N2, C2H2/N2, and C3H8/N2 mixtures.