Thermal compression process for power IC Attachment and the joint properties
碩士 === 國立中興大學 === 材料科學與工程學系所 === 103 === An urgent issue in electronic packaging is the die-attachment technique for high power ICs, such as SiC and GaN, which needs to withstand high operation temperature up to 250oC. For this purpose, this study developed a low-temperature soild-state direct bond...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/34661538905296079697 |