Effects of different radio-frequency powers on inductively coupled plasma thermal chemical vapor deposition carbon thin films using ethene/nitrogen mixtures

• Main Authors: Shi-Hao Lin, 林士豪
• Other Authors: Sham-Tsong Shiue
• Format: Others
• Language: zh-TW
• Published: 2015
• Online Access: http://ndltd.ncl.edu.tw/handle/32819060933429947588

碩士 === 國立中興大學 === 材料科學與工程學系所 === 103 === This study investigates the effects of different radio-frequency (rf) powers on the properties of carbon thin films prepared by thermal chemical vapor deposition (thermal CVD) enhanced with inductively coupled plasma. The residual gases in the thermal CVD process, thickness, microstructure, and electrical properties of carbon thin films are investigated by residual gases analyzer, field emission scanning electron microscopy, X-ray diffractometer, Raman scattering spectrometer, X-ray photoelectron spectrometer, and four-points probe. Residual gases analysis results reveal that the main species in the gas phase contain H2, CH3, CH4, C2H, C2H2, HCN, and N2 (or C2H4), in which H2 decreases with increasing the rf power, but HCN increases with increasing the rf power. Experimental results indicate that the deposition rate of carbon thin films decreases with increasing the rf power; this is because the increase of HCN suppresses the deposition of carbon films. The crystallinity and the ordering degree of carbon thin films increase with increasing the rf power. This is because the decrease of the deposition rate enhances the rearrangement of carbon atoms, which results in the increase of average grain size of carbon films. The number of sp2 carbon sites decreases with increasing the rf power; this is because the increase of the hydrogen content suppresses the formation of the sp2C=C bonds. Finally, the electrical resistivity of carbon thin films increases with increasing the rf power, this is resulted from the decrease of the number of the sp2 C=C bonding.